Structure of epitaxial L10-FePt/MgO perpendicular magnetic tunnel junctions

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of th...

Magnetic tunnel junctions using Co/Ni multilayer electrodes with perpendicular magnetic anisotropy

Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions

Articles you may be interested in Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction Appl. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer

Magnetic Tunnel Junctions

Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...

Magnetic Tunnel Junctions

Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...